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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION With TO-3 package Complement to type 2SD424 High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Open base CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Base current Junction temperature Storage temperature SEM GE TC=25ae OND IC TOR UC VALUE -180 -180 -5 -15 -4 150 150 -55~200 ae ae UNIT V V V A A W Open collector Collector power dissipation Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB554 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -180 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V VBE Base-emitter on voltage IC=-2A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-90V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-2A ; VCE=-5V 40 140 COB Output capacitance fT Transition frequency IE=0 ; VCB=-10V;f=1.0MHz IC=-2A ; VCE=-5V HAN INC SEM GE OND IC TOR UC 6 450 pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB554 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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